Abstract
Abstract High field avalanching in thin insulator and semiconductor layers is investigated by means of electron beam induced conductivity (EBIC). A digital scanning electron microscope DSM 960 provides a precise electron beam system for quantitative EBIC measurements in metal-insulator-semiconductor structures. A remote microscope control has been performed for automatic measurements and data processing. We obtain the avalanche coefficient α as a function of field strength F = (10 5 –10 7 ) V/cm. Moreover we get information on the energy-range-relation for electrons in the thin layer structures, the inner secondary electron (SE) generation and the related creation energy for SE.
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