A Highly Scalable Single Poly-Silicon Embedded Electrically Erasable Programmable Read Only Memory With Tungsten Control Gate by Full CMOS Process

Abstract

A highly scalable single poly-silicon multiple time programmable erasable programmable read only memory (EEPROM) with tungsten metallic control gate (W-CG) manufactured by full 0.13 μm-CMOS process is successfully demonstrated in this letter. Since the coupling ratio of conventional EEPROM cell is reduced with decreasing cell size, a smaller size in W-CG cell with a reduced spacing of CG to floating gate (FG) can obtain a higher coupling ratio and increase programming/erasing window owing to its novel lateral metal-insulator-poly coupling structure.