A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

Abstract

A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high-speed transistor is obtainedwith full depletion of the intrinsic collectorby using implanted CMOS p-well region. Transistors with $\text {BV}_{\text {CEO}} = {10.5}$ V and ${f}_{T} = {15.8}$ GHz are demonstrated. Higher operating currents can be easily obtained by stretching the emitter length resulting in a flexible physical design of circuits. The transistor is fabricated in 0.18- $\mu \text{m}$ HCBT BiCMOS process flow without the additional process steps and the use of additional lithography masks.