Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications

Abstract

Integration of Horizontal Current Bipolar Transistor (HCBT) with CMOS requires fewer additional fabrication steps as compared to vertical-current bipolar devices having state-of-the-art electrical characteristics both in demonstrated implanted-base technology and in simulated SiGe-base technology. HCBT’s noise characteristics and large-signal performance for RF applications is tuned by the collector region design and the optimum device for each application is identified and characterized. High-voltage transistors are demonstrated in HCBT technology with BV CEO from 2.8 V to above 70 V enabling the integration RF and power management and other high-voltage circuits. The HCBT with SiGe base exhibits a potential of further improving the highest-performance vertical-current SiGe HBTs and overcoming their integration limitations with CMOS due to geometrical and material incompatibility.