A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

Abstract

By minimizing surface states with sulfur passivation, a record-high Schottky barrier is achieved with nickel on n-type Si(100) surface. Capacitance–voltage measurements yield a flat-band barrier height of 0.97eV. Activation-energy and current–voltage measurements indicate ∼0.2-eV lower barriers for the Ni/Si(100) junction. These results accompany a previously-reported record-high Schottky barrier of 1.1eV between aluminum and S-passivated p-type Si(100) surface. The operation of these metal/Si(100) junctions changes from majority-carrier conduction, i.e., a Schottky junction, to minority-carrier conduction, i.e., a p–n junction, with the increase in barrier height from 0.97eV to 1.1eV. Temperature-dependent current–voltage measurements reveal that the Ni/S-passivated n-type Si(100) junction is stable up to 110°C.