Abstract
Cross‐linked positive resists derived from copolymers of methacrylonitrile (MCN) and methacrylic acid (MAA) have been developed based on the theoretical formula which shows that a large value is essential to improve the cross‐linked positive resist sensitivity, where is the weight‐average molecular weight and is the main chain scission efficiency. The cross‐linked positive resist consists of with a viscosity‐average molecular weight of and tripropylene glycol diglycidyl ether (TPG) as a cross‐linking agent. It has high sensitivity (3 μC/cm2) and high dry‐etch resistance, reflecting the large value of the copolymer and the high dry‐etch resistance of the MCN component. The resist is applied to a trilayer resist system as the top imaging layer. Submicron fine patterns delineated at 3.4 μC/cm2 are transferred to the thick organic layer, and high aspect ratio patterns are obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
