Studies on a novel mask technique with high selectivity and aspect-ratio patterns for HgCdTe trenches ICP etching

Abstract

A novel mask technique, combining high selectivity silicon dioxide patterns over high aspect-ratio photoresist (PR) patterns has been exploited to perform mesa etching for device delineation and electrical isolation of HgCdTe third-generation infrared focal plane arrays (IRFPAs). High-density silicon dioxide film covering high aspect-ratio PR patterns was deposited at the temperature of 80°C and silicon dioxide film patterns over high aspect-ratio PR patterns of HgCdTe etching samples was developed by standard photolithography and wet chemical etch. Scanning electron microscopy (SEM) shows that the surfaces of inductively coupled plasma (ICP) etched samples are quite clean and smooth. The etching selectivity between the novel mask and HgCdTe of the samples is increased to above 32: 1 while the side-wall impact of etching plasma is suppressed by the high aspect ratio patterns. These results show that the combined patterning of silicon dioxide film and thick PR film is a readily available and promising masking technique for HgCdTe mesa etching.