Abstract
A compact analytical single electron transistor (SET) model is proposed. This model is based on the “orthodox theory” of single electron tunneling, valid for unlimited range of drain to source voltage, valid for single or multi-gate, symmetric or asymmetric devices and takes the background charge effect into account. This model is computationally efficient in comparison with existing models. SET characteristics produced by the proposed model have been verified against Monte Carlo simulator SIMON and show good agreement. This model has been implemented in HSPICE simulator through its Verilog-A interface to enable simulation with conventional MOS devices and single electron inverter has been simulated and verified with SIMON results. At high operating temperature, the thermionic current is taken into account.
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