Abstract
This article firstly, presents an analytical static model of Single Electron Transistor (SET) based on the orthodox theory and enhanced to take into account the influence of temperature (thermionic current). Comparisons with the SIMON simulator and measurements show that our model is correct and accurate. Using this model, we analysed the performances of Voltage Controlled Oscillators (VCO) based on two hybrid SET-MOSFET architectures. In particular we compared the VCO performances with ideal and realistic SETs for different CMOS technology nodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
