Abstract
We propose systematic experiments of Negative Bias Temperature Instability and a model of the threshold voltage during and after the stress. The stress conditions were varied as function of time, voltage, temperature. After the stress end, recovery was monitored for ten seconds. The model takes into account the activity of interface, bulk and border traps, clarifies each contribution during and after the stress and the hydrogen related mechanism. The fast release kinetics of border traps after the stress end is discussed, the entity of the threshold voltage recovery before measurement is calculated and its possible impact on the overall reliability assessment is discussed.
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