A Compact Analytical Drain Current Model of Fully Depleted SOI MOSFETs with Lightly Doped N- underneath the N+ Source Region

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In this work, we report a 2-D analytical model for threshold voltage and drain current of fully depleted silicon-on-insulator (SoI) metal oxide semiconductor field-effect transistor (MOSFET) with lightly doped N- underneath the N+ source region. This model considers the effect of oxide thickness, source doping variations and silicon film thickness. The accuracy of the proposed model is verified using 2-D numerical simulations in terms of surface potential, threshold voltage and drain current. In comparison with the conventional FD SOI devices, the proposed model predicts that modified source based FD SOI structure gives better OFF-state current, improved ON-state to OFF-state current (ION/IOFF ~ 109) ratio.