Abstract
A C-band linear power amplifier is successfully developed with a one-chip 2mm AlGaN/GaN high electron mobility transistors (HEMTs). Two kinds of matching circuits for the linear power amplifier are compared. Besides, stabilization methods for the amplifier are also discussed. At 5.4GHz, the developed GaN HEMTs linear power amplifier delivers a 37.2dBm (5.2W) cw P1dB output power with 9dB linear gain and 55.7% maximum power-added efficiency (PAE) with a drain voltage of 25V. To our best knowledge, the achieved PAE is the state-of-the-art result ever reported for 2mm gate width single die GaN-based hybrid microwave integrated power amplifier at C-band.
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