A 200-V SOI p-Channel LDMOS with thick gate oxide layer

Abstract

A 200-V SOI p-channel pLDMOS with thick gate oxide layer is presented in this paper. The thick gate oxide layer is formed by field oxide process to endure the high voltage between the source and gate electrodes. The field implant (FI) technology is adopted to eliminate channel discontinuity at the bird's beak region. The influences of key parameters on on-state breakdown voltage (BV ON ) and off-state breakdown voltage (BV off ) of the SOI pLDMOS are discussed. The SOI pLDMOS with BVoff of −240 V is experimentally realized, and is successfully applied to HV driving IC.