Abstract
Solution-processed organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED) are cost-effective electroluminescence devices ideal for large-area display and lighting applications. Charge transport layers are of extreme importance in these devices to realize efficient carrier injection and high external quantum efficiency. Metal oxides have proven to be a class of promising materials for either electron or hole transport layers. In this chapter, the use of typical n-type and p-type metal oxides as electron and hole transport layers in OLEDs and QLEDs are briefly reviewed. Using ZnO and NiO as the examples, the roles of metal oxides for energy band alignment and interfacial engineering are also described.
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