Abstract
This chapter concerns the study of radiofrequency power amplifiers’ reliability, for RAdiowave Detection And Ranging (RADAR) applications, based on gallium nitride transistors. Compared to the literature, this study combines electrical characterization, aging tests and physical analysis. It shows that temperature is the main degradation parameter and the gate contact is a more sensitive transistor element. All analysis tools lead to this conclusion. We also present in this chapter a novel and preliminary electrical model which consists of introducing reliability early in the design phase.
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