Abstract
Due to their low switching and conduction losses, Gallium Nitride (GaN) transistors are inherent candidates in hard-switched power converter topologies. The performance of five different GaN transistors in a Totem-Pole Power Factor Controlled (PFC) rectifier is compared by circuit simulation using transistor models parameterized by measurements with the double-pulse test. This is supplemented by calorimetric measurements to parameterize the models for the magnetic components. Simulation results show a possible efficiency of about 99.1 %.
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