Abstract
This chapter reviews key properties of nanowire (NW) phase change materials and how they affect device performance and reliability. Crystallization kinetics, phase transitions, thermal and electrical properties, as well as the properties of core-shell structures, are discussed. Size effects are considered, particularly in relation to scaling parameters, reduction of programming energy and drift resistance, since such effects can provide useful and sometimes unexpected properties with respect to other phase change memory (PCM) devices. A comparative analysis among high performing NW devices in terms of threshold voltage, programming currents and cyclability gives an idea of the strong potential of NWs when compared to conventional PCM devices.
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