1 - OxRAM technology development and performances

Abstract

This chapter reviews some key aspects of the studies and developments of filamentary-oxide-based resistive memory technology (OxRAM) carried out at imec over the last decade. It describes the switching mechanism and filament properties, details the main advantages of the concept, namely the CMOS-friendly integration, scalability, switching speed, and endurance, however, also the long-standing issues of switching variability and retention tail losses. It finally explains how the tackling of these latter limitations will determine the future application space of the concept, be it in storage-class or embedded memory areas.