Abstract
Semiconductor devices for power electronics are quite distinctive from those used in low power or high frequency applications. They operate in switched mode operation, switching from ON state to OFF state and vice-versa. Optimizing the losses dissipated by each power device for a fixed device area has been a key goal since the early days of power electronics. In this chapter, the first section demonstrates the switching characteristics of diamond Schottky barrier diode (SBD), which is expected to be fast as a feature of unipolar device, with a comparison of conventional Si PiN diode and SiC SBD. The second section deals with various aspects of power devices from the definition of figures of merits to the literature review of state-of-the-art technologies. Issues related to the unique material properties of diamond and the current technological limitations are examined in detail. Further improvements in device performance as well as implementation in power converters are covered.
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