Abstract
We propose a multi-layer ceramic based surface mount device (SMD) packaging for 1200 V and 1700 V silicon carbide (SiC) Schottky barrier diode (SBD) power semiconductors. The distance between anode and cathode on a ceramic substrate is 1.0 mm to achieve an isolation voltage performance over 2000 V. We implemented the proposed multi-layer ceramic based substrates with 8 mm x 8 mm size. Using the substrates, we fabricated three SMD typed power semiconductor packaging such as 1200 V/2 A, 1200 V/5 A, and 1700 V/5 A-class SiC SBD and evaluated forward/reverse static and dynamic performances. It is the world's first result of SMD packaging using a multi-layer ceramic substrate for 1200 and 1700 V SiC SBD.
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