Abstract
Experimental verifications are presented for the injection enhanced gate effects of a new metal oxide semiconductor (MOS) controlled power transistor. We call this transistor an “injection enhanced gate transistor” (IEGT). It was first experimentally confirmed that IEGTs achieve the same low on-state voltage drop as that of gate turn-off (GTO) thyristors without degradation of turn-off capability. The fabricated 4.5 kV IEGT with 8 µ m deep trench gates exhibited an on-state voltage of 2.5 V at 100 A/cm2, and the measured on-state voltage drop as a function of the trench gate structural parameter agrees well with the predicted values. By use of the fabricated IEGT, 4.2 kV self-clamped anode voltage switching operation was achieved at a turn-off current density of 65 A/cm2. The observed electrical characteristics of the fabricated IEGTs agree well with the predicted characteristics, and it was confirmed that high voltage and high power can be directly controlled by a MOS gate.
Published Version
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