Abstract
This paper investigates the injection enhancement effect of a trench gate structure for a metal oxide semiconductor (MOS) controlled power transistor called an injection enhanced gate transistor (IEGT). By virtue of the enhancement in effective electron injection efficiency, 4.5 kV IEGTs attain a thyristor-like carrier profile during the on-state, and hence achieve the same low on-state voltage drop as that of thyristors. The operation mode of the IEGT was studied using a two-dimensional numerical simulation, and verified by device fabrication. It was confirmed that the proposed novel trench gate geometry acts as an injection enhancer by restricting the hole diffusion current which flows from the n-type high-resistance base layer to the cathode electrode. It is shown for the first time that the effective electron injection efficiency of the n-ch insulated gate bipolar transistor increases to nearly 1. It is also shown that the new trench gate structure effectively decreases the forward voltage drop without degradation of turn-off capability.
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