The 4.5 kV Press Pack Injection Enhanced Gate Transistor with Current Sense Function

Abstract

This paper presents the 4.5 kV trench gate injection enhanced gate transistor (IEGT) with a current sense function that realizes short-circuit withstanding capability without suffering from low on-state voltage drop. We propose a new concept of the press pack IEGT with the current sense function. In the press pack IEGT with the current sense function, 20 IEGT chips are connected in parallel inside the package, and its collector current can be controlled under short-circuit condition.