Abstract
2nd generation dual gate MOS thyristor (2nd gen.-DGMOS) with 900 V blocking capability are presented to realize an extremely excellent trade-off characteristic between an on-state voltage drop and a turn-off loss with a high turn-off capability and to overcome the IGBT's characteristics for the first time. A superior on-state voltage drop (Von) of 1.29 V at 10 A(71.3 A/cm/sup 2/) with the turn-off loss (Eoff) of 101 /spl mu/J is successfully achieved. These values of Von, Eoff indicate the much superior trade-off characteristic to the IGBT. Furthermore, it should be noted that the 2nd gen.-DGMOS achieves better turn-off capability of approximately 500 A/cm/sup 2/ in a voltage resonant circuit, which is 3.0 times higher than that of the conventional DGMOS.
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