Collector-gate-controlled lateral IGBT for reduction of on-state voltage and turn-off loss

Abstract

A collector-gate controlled lateral IGBT (CG-LIGBT) with an additional gate called a collector gate (CG) was developed for reducing both the on-state voltage drop (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> ) and turn-off energy loss (E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> ) compared to the conventional LIGBT. Carrier density in the CG-LIGBT can be dynamically regulated by controlling the N-MOSFET, which is newly added in the collector region, with the CG. The enhanced hole injection due to an additional P-body region in the collector enables a 26% reduction of the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> compared to the conventional LIGBT. In addition, the E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> is reduced by 63% with CG control compared to without CG control because the carrier density is decreased by turning on the CG just before turning off the CG-LIGBT. The device can also be fabricated without any additional process compared to the conventional LIGBT.