A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side

Abstract

In this paper, a 4H-SiC trench insulated gate bipolar transistor (IGBT) incorporating a Schottky contact in the collector side is proposed to reduce the turn-off energy loss. The proposed structure is explored and compared with the conventional IGBT using ATLAS. The simulation results have indicated that the reduction in turn-off energy loss is more than 88%, with a slight degradation in the ${I}$ – ${V}$ characteristics. Concurrently, with the same on-state voltage drop, the turn-off loss is reduced by a figure of 84%.