Abstract
We have developed a 2D model for double-gate SOI MOSFET based on a solution of the Laplacian for the device body utilizing conformal mapping techniques. The model yields explicit expressions for the subthreshold and near-threshold electrostatics of the device, including the perpendicular electrical field and the potential distributions along the silicon/insulator interfaces and at the center gate-to-gate axis. From these expressions, we derive information on the threshold conditions, the potential barrier topography, and the electron density distribution in the device under different biasing conditions. This model constitutes a framework for very precise, scalable, compact models of nanoscale MOSFETs.
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