Abstract
The transition between the partial depletion (PD) and full depletion (FD) modes of operation is encountered in modern SOI MOSFET with the reduced silicon film thickness. This effect is referred to as dynamic depletion (DD) operation and needs to be included in advanced SOI MOSFET models. The feasibility of developing the surface-potential-based model of SOI MOSFET operating in the DD regime has been demonstrated in [1]. In the present work we develop complete DD SOI MOSFET model based on the industry standard bulk MOSFET model PSP [2] and the equations for the inversion charge originally developed for the thin-film transistor [3]. From a more general point of view, this development adopts the symmetric linearization method [2] to the DD SOI operation while retaining the highly developed description of the small geometry effects in the PSP models of bulk and PD SOI devices [2], [4]. The new model is verified using TCAD simulations of DD SOI devices.
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