Abstract
The piezoresistive effect in silicon nanowires has attracted a great deal of interest for NEWS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron beam lithography(EBL). Focused ion beam(FIB), on the other hand, is more compatible with CMOS integration than the bottom up method, and is simpler and more capable of fabricating very narrow Si nanostructures compared to EBL and photolithography. Taking the advantages of FIB, this paper presents for the first time the piezoresistive effect of p-type SiNWs fabricated using FIB implantation and wet etching. The SiNWs were locally amorphized by Ga ion implantation, selective wet-etched, and thermally annealed at 700℃. A relatively large gauge factor of approximately 47 was found in the annealed SiNWs indicting the potential of using the piezoresistive effect in top-down fabricated SiNWs for developing NEMS sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The Proceedings of the Symposium on Micro-Nano Science and Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
