Abstract
The piezoresistive effect in silicon nanowires has attracted a great deal of interest for NEWS devices. Most of the piezoresistive SiNWs reported in the literature were fabricated using the bottom up method or top down processes such as electron beam lithography(EBL). Focused ion beam(FIB), on the other hand, is more compatible with CMOS integration than the bottom up method, and is simpler and more capable of fabricating very narrow Si nanostructures compared to EBL and photolithography. Taking the advantages of FIB, this paper presents for the first time the piezoresistive effect of p-type SiNWs fabricated using FIB implantation and wet etching. The SiNWs were locally amorphized by Ga ion implantation, selective wet-etched, and thermally annealed at 700℃. A relatively large gauge factor of approximately 47 was found in the annealed SiNWs indicting the potential of using the piezoresistive effect in top-down fabricated SiNWs for developing NEMS sensors.
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