Abstract
This paper describes Si plastic reshaping technique, Si origami, by combining focused ion beam (FIB) processing and wet etching. FIB is used as a nano tool for local etching as well as Ga ion implantation. The combination of Ga ion doping and alkali wet etching to a Si wafer enable us to fabricate a nanometer-thick Ga-ion-doped amorphous Si membrane, which can be bent to upward/downward at arbitrary angle by controlling FIB beam irradiation condition. The bending mechanism is discussed in the light of doped Ga ion distribution and collision cascade effect. The Si origami technique allows us to manufacture a micron-sized Si 3D structure like an airplane from a Si nano-membrane.
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