Abstract
In general, silicon single crystals have been grown from the liquid phase by the Czochralski method. And then there are three main convections in the melt during growth by using Czochralski crystal growth system, that are natural convection caused by temperature difference, Marangoni convection on free surface and forced convection given by rotating crucible and silicon single crystal. Besides during the magnetic-field applied Czochralski system, it is necessary to consider influences of an imposed magnetic field on the flow and temperature fields of the melt. In the present paper, we analyze those phenomena with the thermoelectrically conducting fluid simulating program in three dimensions and using GSMAC Finite Element Method coupling with φ Method.
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