Review of some Aspects of Single Crystal Growth Using Czochralski Crystal Growth Technique

Abstract

Abstract Single crystal that semiconductor industry thrive on, are grown using Czochralski (CZ) crystal growth technique. Over the years many researchers have investigated the problems related to CZ crystal growth system and number of studies related to different aspects of CZ crystal growth is available in open literature. Some of the important aspects related to Czochralski (CZ) crystal growth system used for growing single crystal are discussed. Origin of melt convection due to buoyant forces, forced convection due to crystal and crucible rotation and Marangoni convection due to thermo-capillary forces, and their effect on heat and species transport phenomena in the melt pool has been reviewed. Flow in present day large size crystal growth using CZ crystal growth system becomes oscillatory. Oscillations in melt can be damped using externally applied magnetic field. Effect of axial, transverse and inhomogeneous (CUSP) magnetic field on different melt convection has been a subject of interest for various research efforts. Oxygen release from silica crucible during growth of silicon crystal and mechanism for its incorporation into the growing crystal has also been reviewed. Conditions leading to growth of low oxygen concentration silicon crystal are elaborated.