Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth

Abstract

The composition of oxygen-bearing species evaporated from the Sb-doped silicon melts in a mass-production Czochralski (CZ) crystal growth system was studied. Deposits in the growth chamber and in the exhaust vent were analyzed by X-ray diffraction (XRD) measurement. The results showed that the composition of the deposits depended on the collection region, but was independent of the ambient pressure. The analysis showed that deposits in the exhaust vent contained crystalline phases of Sb2O3 and metallic Sb, and those in the inner chamber wall consisted of the crystalline phase of only metallic Sb, while an amorphous phase of SiO was only detected in the exhaust vent. It can therefore be concluded that Sb oxide species evaporate from the melt to Ar ambient in a Sb-doped CZ silicon crystal growth system. The site difference of nucleation and growth of evaporated species may have affected the deposition composition in CZ crystal growth system.