Abstract
The composition of oxygen-bearing species evaporated from the Sb-doped silicon melts in a mass-production Czochralski (CZ) crystal growth system was studied. Deposits in the growth chamber and in the exhaust vent were analyzed by X-ray diffraction (XRD) measurement. The results showed that the composition of the deposits depended on the collection region, but was independent of the ambient pressure. The analysis showed that deposits in the exhaust vent contained crystalline phases of Sb2O3 and metallic Sb, and those in the inner chamber wall consisted of the crystalline phase of only metallic Sb, while an amorphous phase of SiO was only detected in the exhaust vent. It can therefore be concluded that Sb oxide species evaporate from the melt to Ar ambient in a Sb-doped CZ silicon crystal growth system. The site difference of nucleation and growth of evaporated species may have affected the deposition composition in CZ crystal growth system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
