Abstract
In this paper, a new gate driver circuit architecture for a hydrogenated amorphous silicon thin film transistor (a‐Si:H TFT) is proposed for the touch sensing stage and the normal stage of gate driver. The circuit operates with the time‐division driving method which integrates between normal display driving and touch interval to reduce the crosstalk between the touch signals and outputs of gate driver. This new gate driver circuit can transmit undistorted signals after a long period of touch sensing and the simple circuit structure could fit narrow bezel TFT‐LCD application by reducing the number of TFTs significantly. Moreover, the proposed gate driver could also slow down the degradation of driving TFTs by inserting the duplicated stage for touching. The results of 25 °C simulation, 85 °C simulation, −40 °C simulation will be discussed. Finally, the measurement results show that the proposed gate driver could suspend about 1000μs touch interval without output distortion for the gate driver and the performance could fit the in‐cell touch screen application.
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