A fast integrated a-Si gate driver

Abstract

A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed in this paper. To improve the circuit speed, a new input scheme is designed to provide a full scale pre-charge voltage. So the loss of pre-charge voltage, a challenge in the conventional designs, is avoided. Simulations show that the proposed gate driver has a much improved driving speed in comparison with the conventional ones. The improvement is more effective in the case of the higher V TH and lower supply voltage. The proposed gate driver is suitable for high performance display applications.