Abstract
This chapter discusses the diagnostic techniques that are concerned with elucidating chemical composition of layered III–V materials by detecting the results of charged particle beam interactions with solids. The chapter illustrates the detection of the scattered incident ions by Rutherford Backscattering Spectrometry (RBS) and presents and analysis of target material sputtered during ion bombardment by secondary ion mass spectrometry (SIMS). Ion beams are useful in obtaining a wide variety of data about the bulk and dopant elemental composition of compound semiconductors. This information can be surface-sensitive or depth-resolved with good accuracy. Micro-focused ion beam probing of minute samples can destroy the device, so the overall detection efficiency of all sputtered material must be at least 1% in order to obtain reasonable statistical significance about the sample's contents. Ultra high intensity post-ionization (UHIPI) is the only approach to achieve atom counting of ultra small samples. Some modern lasers are capable of delivering greater than 1 mJ of energy in 100 femto seconds. These lasers, coupled with kHz pulsed micro-focused ion beams and time-of-flight mass spectrometry can play a key role in the future characterization of all nano-materials including compound semiconductors.
Published Version
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