121 GHz resonant-tunnelling hot electron transistors having new collector barrier structure

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This Letter describes a study of the DC and microwave characteristics of resonant-tunnelling hot electron transistors (RHETs) fabricated using a new (i-InAlGaAs/i-GaAs collector barrier structure. The current gain at a low collector–base voltages was improved, enabling the RHETs to operate at low collector–emitter voltages and to decrease the transit time. A cutoff frequency fT of 121 GHz was achieved at a temperature below 77 K with an emitter current density of 6.7×104 A/cm2. This is the highest value yet reported for either hot electron transistors or the quantum-effect devices.