Abstract
In order to evaluate the effects of space radiation on the imaging function of a CMOS active pixel sensors(APS) manufactured in a 0. 5 μm CMOS N-well technology,60Co-γ radiation experiment was conducted for the overall circuit and pixel unit of the device,and the effects of the total dose on the main parameters of the device were analyzed. When the total dose of irradiation reached a certain value and during annealing,the dark signal,saturated output signal and pixel unit output signal were measured quantitatively off line. The mean dark signals dramatically increase with the total dose. The saturation output signal decreases with the total dose,being consistent with the output signal of the pixel unit saturation. It is found that the degradation of the device parameters is caused mainly by the radiation induced charge in LOCOS(Local oxidation of silicon) isolation oxide layer.
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