Abstract
The Auger electron spectroscopy method confirmed a high concentration of carbon atoms (~ 85 at. % ), introduced into silicon by cold implantation of recoil atoms. Carbon atoms are concentrated in a thin (~ 5 nm) near-surface region of silicon. Annealing of such a structure did not reveal a noticeable diffusion of carbon, which does not allow obtaining a layer of SiC with a thickness of more than a few nm. The solution to this problem was carried out by the use of radiation-stimulated diffusion. This made it possible to control the distribution profiles of carbon atoms in a wide range. Annealing at 1150 oC allowed to obtain layers of amorphous crystalline SiC with a thickness of 50-150 nm. Higher annealing temperatures are required to obtain a single-crystal SiC film.
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