Features of silicon carbide synthesis by cold implantation of carbon recoil atoms

Abstract

The Auger electron spectroscopy method confirmed a high concentration of carbon atoms (~ 85 at.%) introduced into silicon by cold implantation of recoil atoms. Carbon atoms are concentrated in a thin (~ 5 nm) near-surface region of silicon. Annealing of such a structure did not reveal a noticeable diffusion of carbon, which prevents obtaining a layer of SiC with a thickness of more than a few nm. This problem was solved by using radiation-enhanced diffusion. This made it possible to control the distribution profiles of carbon atoms in a wide range. Annealing at 1150oC allowed obtaining layers of amorphous-crystalline SiC with a thickness of 50-150 nm. Higher annealing temperatures are required to obtain a single-crystal SiC film. Keywords: cold implantation, radiation-enhanced diffusion, silicon carbide, recoil atom, thin films.