Abstract
An experimental study on the influence of the energy and the number of atoms in the bombarding ions Bin+ (n = 1-4) on the sputter yield of GaAs was carried out. It was shown that the specific sputter yield Ysp nonadditively increase with an increasing of n and specific kinetic energy Esp per an atom in the bombarding ion, and the efficiency of energy transfer from bombarding ions to target atoms also increases with an increasing of n. A comparison was made with the previously obtained results for Si targets.
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