Abstract
An experimental study on the influence of the energy and the number of atoms in the bombarding ions Bin+ (n=1-4) on the sputter yield of GaAs was carried out. It was shown that the specific sputter yield Ysp non-additively increases with increasing n and specific kinetic energy Esp per an atom in the bombarding ion, and the efficiency of energy transfer from bombarding ions to target atoms also increases with increasing n. A comparison was made with the previously obtained results for Si targets. Keywords: ion sputtering, non-additivity factor, cluster ions, bismuth.
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