Abstract
Single-crystalline α-Cr2O3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700-850°C. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800°C, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~ 300 arcsec.
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