Abstract
AbstractGrowth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10^7 cm^–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.
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