Reduction in the Effective Barrier Height in Ptsi-P-Si Schottky Diodes by Using Low Energy Ion Implantation

Abstract

A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4 × 1012 ions cm−2, the barrier height was observed to decrease from 0.26 to 0.16eV. The reduction in barrier height correlated well with the boronconcentration found at or near the PtSi-Si interface.