Abstract
Be adsorption and T = 900 - 1100 K results in formation of a stable adsorption state; it drops the activation energy of atomic Be dissolution in the substrate bulk, and all newly deposited Be dissolves in the substrate. The absolute concentration of atomic Be has been measured by Auger electron spectroscopy using specially designed ultra high vacuum getter Be source. The concentration is (1 ± 0.1)•1015 сm-2 , and corresponds to WBe stoichiometry relative to W surface concentration. The layer is destroyed at T > 1100 K, the atomic Be dissolves in the bulk with the activation energy ~ 3,5 eV.
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