Abstract
The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It is shown that if, in comparison with a pure bulk material, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field, then for GaN-based heterostructures, the decrease of the drift velocity overshot in the studied cases does not exceed 30%.
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