Abstract
The processes of nonlocal electron heating in transistor heterostructures based on gallium nitride and gallium arsenide were compared. It has been shown that, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field as compared with pure bulk GaAs, while in GaN-based heterostructures the decrease in the drift velocity overshot does not exceed 30% in the studied cases. Keywords: Real space transfer, field-effect transistor, gain factor
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