Abstract
The capacitance-voltage (С-V) characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal-insulator-semiconductor (MIS) structures were studied. It was found that the measurement of the C-V characteristics of MIS structures based on InAlAs by the fragment method, in contrast to the standard technique at a constant bias voltage scan rate, significantly reduces the hysteresis effect and allows to obtain stationary curves. It was shown that the fast interface states density calculated by the Terman method from such C-V characteristics varies slightly along the InAlAs band gap and amounts to (3-6) 1011 eV-1cm-2 and (1-3)·1011 eV-1cm-2 for MIS structures with Al2O3 and SiO2, respectively.
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