Abstract
AbstractIt has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO_2(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.
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